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A technique for forming a nanosized gate of a high-power microwave transistor is proposed. The optimal exposure parameters of 950-PMMA-A2 and ELP-20 resists are established. The technological route of ion beam lithography with the use of multilayer resists is investigated. A technique for fabricating a continuous mesh of earthed alignment marks formed on the ion-sensitive resist to visualize the alignment...
Overlay alignment is a concern for nanolithography applications, in particular, for those using step and repeat techniques targeting next-generation lithographic applications. In this context, a new method and a proof of concept (POC) setup for accurately aligning a mask with a semiconductor wafer is presented. Utilizing active scanning probe technology, the method is employable for various lithographic...
We present results of material optimization for the alignment marks used in the Electron-Beam Direct-Write (EBDW) lithography. Such marks have been proposed both for negative (grooves) as well as for positive (elevated) topographies. The primary mask for the alignment mark patterns is done by photolithography and e-beam lithography. The negative topography of the marks was transferred by Deep Reactive...
Mathematical model for automatic alignment of wafers was derived under the assumption of the ideal condition of alignment marks. Because wafers were fabricated under nonideal conditions at the factory level, the wafers were difficult to handle during the manufacturing process. The difficulty arose from distortion due to dust, water and contaminant. The errors from the distortion could be reduced when...
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